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Иш: Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

The electrical properties of zinc in silicon
Sharon M. Weiss, R. Beckmann, Rainer Kassing
Мақола19903 иқтибос
ABI
Carrier transport mechanisms in semiconductor nanostructures and devices
M. A. Rafiq
Мақола20183 иқтибос
ABI
Diffusion and Electrical Behavior of Zinc in Silicon
C. S. Fuller, François Morin
Мақола19573 иқтибос
ABI
Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters
Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1
МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 иқтибос
ABI
Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K
Sana Boughdachi, Yosef Badalı, Yashar Azizian‐Kalandaragh +1
Мақола20182 иқтибос
ABI
Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials
David Degler, Udo Weimar, Nicolae Bârsan
Шарҳ мақола20192 иқтибос
ABI
Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A. Türüt
Мақола20202 иқтибос
ABI
Tunneling via surface dislocation in W/β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes
Madani Labed, Ji Young Min, Amina Ben Slim +4
Мақола20232 иқтибос
ABI
Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer
Muhammed Can ÖZDEMİR, Ömer Sevgi̇li̇, İkram Orak +1
Мақола20202 иқтибос
ABI
Infrared spectroscopy of the neutral zinc double-acceptor in silicon
E. Merk, James Heyman, E. E. Häller
Мақола19892 иқтибос
ABI
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6
Мақола20242 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI