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37 та иш

Иш: Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

  1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

    M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

    МақолаSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20254 иқтибос
    ABI

  2. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

    Ye Shen, Xuan Fang, Xiang Ding +6

    Мақола20204 иқтибос
    ABI

  3. Influence of high-fluence electron irradiation on the band gap, Raman spectra, and microhardness of ZnSe

    M. Yu. Tashmetov, Bakhtiyar Madaminov

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysica Scripta20253 иқтибос
    ABI

  4. Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

    A. vom Felde, Klaus Kern, G. S. Higashi +4

    Мақола19903 иқтибос
    ABI

  5. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    П. В. Середин, A. V. Fedyukin, I. N. Arsentyev +5

    Мақола20163 иқтибос
    ABI

  6. A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation

    Jingxuan He, Ye Shen, Bo Li +6

    Мақола20203 иқтибос
    ABI

  7. Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

    Authit Phakkhawan, Aparporn Sakulkalavek, Siritorn Buranurak +7

    Мақола20223 иқтибос
    ABI

  8. Structure and morphology of electron-irradiated ZnSe

    M. Yu. Tashmetov, Bakhtiyar Madaminov

    МақолаChalcogenide Semiconductor Thin FilmsRadiation effects and defects in solids20252 иқтибос
    ABI

  9. Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

    H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer

    Мақола20072 иқтибос
    ABI

  10. Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode

    Shailesh K. Khamari, V. K. Dixit, Tapas Ganguli +5

    Мақола20102 иқтибос
    ABI

  11. Phonons in a one-dimensional microfluidic crystal

    Tsevi Beatus, Tsvi Tlusty, Roy Bar‐Ziv

    Мақола20062 иқтибос
    ABI

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