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Иш: On the Theory of the Intraband Mechanism of Single-Photon Absorption in Semiconductors, Taking into Account the Effect of Coherent Saturation
Band parameters for III–V compound semiconductors and their alloys
I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan
Мақола200121 иқтибосABISuperlinear Photogalvanic Effects in (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Bi</mml:mi><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Sb</mml:mi><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>2</mml:mn></mml:msub></mml:math>(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Te</mml:mi><mml:mrow><mml:mn>0.1</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mrow><mml:mn>0.9</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>3</mml:mn></mml:msub></mml:math>: Probing Three-Dimensional Topological Insulator Surface States at Room Temperature
S. N. Danilov, L. E. Golub, Thomas Mayer +8
Мақола20212 иқтибосABI