Electrophysical Characterization of Photodetectors Based on Semiconductor Structures Si (Li) and Si(Au)

This paper explores the technological and physical principles for developing silicon-lithium (Si(Li)) nuclear radiation detectors with a thickness greater than 1.5 mm and a surface area of at least The formation of large-area p–i–n structures through lithium ion drift and diffusion mechanisms was analyzed. To evaluate the electrophysical parameters of the detectors, current-voltage (I–V) and capacitance-voltage (C–V) characteristics were measured. The I–V results under reverse bias in the range of showed extremely low leakage currents indicating the formation of high-quality junctions. Beyond 100 V, the current remained nearly constant, forming a plateau region. The findings propose effective technological solutions for the development of highly sensitive, stable, and low-noise radiation detectors.

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