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Ушбу иш иқтибос қилган ишлар

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Иш: Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

  1. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20253 иқтибос
    ABI

  2. Optoelectronic characterization of ZnS/PS systems

    王彩凤 Caifeng Wang, 李清山 Qingshan Li, 胡波 Bo Hu

    Мақола20093 иқтибос
    ABI

  3. Experimental Study on Structural, Optical and Electrical Properties of Chemical Bath Deposited CdZnS Thin Films

    Md Sabbir Akhanda, Rummana Matin, Muhammad Shahriar Bashar +3

    Мақола20173 иқтибос
    ABI

  4. Breaking the Doping Limit in Silicon by Deep Impurities

    Mao Wang, A. Debernardi, Y. Berencén +10

    Мақола20193 иқтибос
    ABI

  5. CdxZn1-xS thin films deposited by Chemical Bath Deposition (CBD) method

    R. Zellagui, H. Dehdouh, M. Adnane +2

    Мақола20203 иқтибос
    ABI

  6. Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

    F.T. Munna, Vidhya Selvanathan, K. Sobayel +5

    Мақола20203 иқтибос
    ABI

  7. A study of morphological, optical, and photoluminescence properties of ZnS thin films doped Mn and ca

    Amina Laouid, Amine Alaoui‐Belghiti, K. Wiśniewski +5

    Мақола20243 иқтибос
    ABI

  8. Dependence of spectroscopic and electrical properties on the size of cadmium sulfide nanoparticles

    R. Seoudi, A. A. Shabaka, Mustafa Kamal +2

    Мақола20123 иқтибос
    ABI

  9. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20252 иқтибос
    ABI

  10. Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior

    I. B. Sapaev, Jamoliddin I. Razzokov, Jo`shqin Abdullayev +2

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20252 иқтибос
    ABI

  11. Si-CdS heterojunction memory diodes

    W.J. Duncan, A. R. Smellie

    Мақола19782 иқтибос
    ABI

  12. Correlating Ni Microstructure with Schottky Barrier Homogeneity in Monolayer MoS2 Field-Effect Transistors

    Мақола20252 иқтибос
    ABI

  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI