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Иш: Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties
Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation
Ye Shen, Xuan Fang, Xiang Ding +6
Мақола20204 иқтибосABIAtomic and electron structure of the GaAs (001) surface
S. E. Kulkova, С. В. Еремеев, A. V. Postnikov +2
Мақола20072 иқтибосABIGaAs nanocrystals: Structure and vibrational properties
Jhasaketan Nayak, S.N. Sahu, Satoshi Nozaki
Мақола20052 иқтибосABIPorous layers on compensated GaAs:Cr
A. S̆imkien≐, J. Sabataityt≐, V. Karpus +4
Мақола20032 иқтибосABIMikro- und Ultramikrohärteprüfung an GaAs-Einkristallen
F. Bergner, Ute Bergmann, Michael Schäper +2
Мақола20012 иқтибосABICharacterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)
Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Manizales 170004, Colombia, Camilo Pulzara-Mora, José Doria-Andrade +7
Мақола20242 иқтибосABIPerformance analysis of GaAs based solar cells under gamma irradiation
Nikola Papěž, A Gajdoš, Rashid Dallaev +5
Мақола20202 иқтибосABI