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Ушбу иш иқтибос қилган ишлар

52 та иш

Иш: Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

  1. High-efficiency sub-microscale uncertainty measurement method using pattern recognition

    Chenyang Zhao, Chi Fai Cheung, Peng Xu

    Мақола202015 иқтибос
    ABI

  2. Van der Waals heterostructures

    A. K. Geim, I. V. Grigorieva

    Мақола201312 иқтибос
    ABI

  3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

    Qing Hua Wang, Kourosh Kalantar‐Zadeh, András Kis +2

    Шарҳ мақола201211 иқтибос
    ABI

  4. Auger scattering dynamic of photo-excited hot carriers in nano-graphite film

    Sichao Du, Juxin Yin, Hao Xie +11

    Мақола20228 иқтибос
    ABI

  5. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

    Manish Chhowalla, Hyeon Suk Shin, Goki Eda +3

    Мақола20136 иқтибос
    ABI

  6. Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

    Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8

    МақолаGraphene research and applicationsACS Applied Electronic Materials20236 иқтибос
    ABI

  7. Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

    Shuai Li, Jieshi Chen, Xiao He +3

    Мақола20235 иқтибос
    ABI

  8. High Birefringence D-Shaped Germanium-Doped Photonic Crystal Fiber Sensor

    Qianhe Zhao, Jin Liu, Haima Yang +3

    Мақола20224 иқтибос
    ABI

  9. Improved memory performance of ALD grown HfO2 films by nitrogen doping

    Jamal Aziz, Muhammad Farooq Khan, Daniel Neumaier +9

    Мақола20234 иқтибос
    ABI

  10. Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe<sub>2</sub>/MoS<sub>2</sub> Dichalcogenide Heterojunction

    Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari +2

    Мақола20164 иқтибос
    ABI

  11. Formation of an MoTe<sub>2</sub> based Schottky junction employing ultra-low and high resistive metal contacts

    Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal +4

    Мақола20193 иқтибос
    ABI

  12. Carrier‐Type Modulation and Mobility Improvement of Thin MoTe<sub>2</sub>

    Deshun Qu, Xiaochi Liu, Ming Huang +6

    Мақола20173 иқтибос
    ABI

  13. Luminescent Properties and Charge Compensator Effects of SrMo0.5W0.5O4:Eu3+ for White Light LEDs

    Li Kong, Hao Sun, Yuhao Nie +6

    Мақола20233 иқтибос
    ABI

  14. Phase patterning for ohmic homojunction contact in MoTe <sub>2</sub>

    Suyeon Cho, Sera Kim, Jung Ho Kim +11

    Мақола20153 иқтибос
    ABI

  15. Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>

    Ignacio Gutiérrez Lezama, Ashish Arora, Alberto Ubaldini +4

    Мақола20153 иқтибос
    ABI

  16. Bandgap opening in few-layered monoclinic MoTe2

    Dong Hoon Keum, Suyeon Cho, Jung Ho Kim +9

    Мақола20153 иқтибос
    ABI

  17. Sensing mechanism of an Au-TiO<sub>2</sub>-Ag nanograting based on Fano resonance effects

    Haima Yang, Hongxin Huang, Xiaolin Liu +5

    Мақола20232 иқтибос
    ABI

  18. Large, non-saturating magnetoresistance in WTe2

    Mazhar N. Ali, Jun Xiong, Steven Flynn +8

    Мақола20142 иқтибос
    ABI

  19. Two-dimensional spintronics for low-power electronics

    Xiaoyang Lin, Wei Yang, Kang L. Wang +1

    Мақола20192 иқтибос
    ABI

  20. Pronounced Optoelectronic Effect in n–n ReS<sub>2</sub> Homostructure

    Sewon Park, J. Y. Ha, Muhammad Farooq Khan +7

    Мақола20222 иқтибос
    ABI

  21. Field-Effect Transistors Based on Few-Layered α-MoTe<sub>2</sub>

    Nihar Pradhan, Daniel Rhodes, Simin Feng +6

    Мақола20142 иқтибос
    ABI

  22. Controlling Polarity of MoTe<sub>2</sub> Transistors for Monolithic Complementary Logic <i>via</i> Schottky Contact Engineering

    Xia Liu, Arnob Islam, Jing Guo +1

    Мақола20202 иқтибос
    ABI

  23. Phase-controllable laser thinning in MoTe2

    Seohui Kang, Dongyeun Won, Heejun Yang +5

    Мақола20212 иқтибос
    ABI

  24. Efficient sulfur host based on Sn doping to construct Fe2O3 nanospheres with high active interface structure for lithium-sulfur batteries

    Ruiyin Ren, Fuming Lai, Xiaoshi Lang +3

    Мақола20222 иқтибос
    ABI

  25. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

    Xiaofeng Qian, Junwei Liu, Liang Fu +1

    Мақола20142 иқтибос
    ABI