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Иш: On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light
Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков
МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибосABIApplying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков
МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 иқтибосABIEstimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation
Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov
МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201112 иқтибосABIPhotoelectron Si 2p spectra of ultrathin CoSi2 layers formed on Si(100)2×1
M. V. Gomoyunova, I. I. Pronin, N. R. Gall +2
Мақола20039 иқтибосABI