Ушбу иш иқтибос қилган ишлар

6 та иш

Иш: Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment

1. Estimation of changes in parameters of a crystal lattice and energy bands upon variation in the size of nanocrystals and nanofilms of silicides prepared by ion implantation

   Б. Е. Умирзаков, Д. А. Ташмухамедова, Kh. Kh. Kurbanov

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201112 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.196456

2. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

   V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

   Мақола20119 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.196455

3. Semiconductor Surfaces and Interfaces

   F. Bechstedt, R. Enderlein, R. Enderlein

   Китоб19885 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.203261

4. Semiconductor Surfaces and Interfaces

   Winfried Mönch

   Китоб19934 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.203257

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.234116

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.234117