Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

1. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

   Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

   МақолаInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.203259

2. Influence of ion implantation and annealing on composition and structure of GaAs surface

   M.T. Normuradov

   МақолаIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics20020 иқтибос

   ABIABI:AkademIndex/openalex/2002.article.000329

3. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

   S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

   МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.006628