Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: A mechanism for two-electron capture at deep level defects in semiconductors

1. Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

   G. Gulyamov, N. Yu. Sharibaev

   МақолаSurface and Thin Film PhenomenaSemiconductors201110 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.218240

2. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

   М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

   МақолаSemiconductor materials and interfacesSemiconductors20218 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.000422