Ушбу иш иқтибос қилган ишлар

9 та иш

Иш: Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

1. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

   D. V. Lang

   Мақола19749 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424573

2. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

   МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279519

3. Electrical properties and recombination activity of copper, nickel and cobalt in silicon

   A. A. Istratov, E. R. Weber

   Мақола19983 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500799

4. Properties of gold in silicon

   W Murray Bullis

   Мақола19663 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.610644

5. Deep levels in semiconductors

   M. Jaroš

   Мақола19802 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.415236

6. Mechanism of Gold Diffusion into Silicon

   William R. Wilcox, T. J. LaChapelle

   Мақола19642 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.610641

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.610642

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.610643

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.610645