Ушбу иш иқтибос қилган ишлар

11 та иш

Иш: Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals
I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3
Мақола20109 иқтибос
ABI
Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells
А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov
МақолаSemiconductor materials and interfacesApplied Solar Energy20166 иқтибос
ABI
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
K. D. Moiseev, Ya. A. Parkhomenko, Е. В. Гущина +4
Мақола20094 иқтибос
ABI
Сарлавҳасиз
Бошқа3 иқтибос
ABI
Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots
A. Reznitsky, A. A. Klochikhin, M. V. Eremenko
Мақола20143 иқтибос
ABI
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence
A. Kosarev, V. V. Chaldyshev, В. В. Преображенский +2
Мақола20163 иқтибос
ABI
High-density InSb-based quantum dots emitting in the mid-infrared
Vittorianna Tasco, N. Deguffroy, А. Н. Баранов +5
Мақола20063 иқтибос
ABI
MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
P. Möck, G. R. Booker, N. J. Mason +4
Мақола20013 иқтибос
ABI
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev
Мақола20163 иқтибос
ABI
New system of self-assembled GaSb/GaP quantum dots
D. S. Abramkin, М. А. Putyato, А. К. Гутаковский +3
Мақола20122 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI