Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

1. Features of load current–voltage characteristics of a monocrystalline silicon solar cell at various levels of solar illumination

   R. R. Kabulov, N. A. Matchanov, B. R. Umarov

   МақолаPhotovoltaic Systems and SustainabilityApplied Solar Energy20177 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000105

2. Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon

   O. K. Ataboev, R. R. Kabulov, N. A. Matchanov +1

   МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20194 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000236

3. The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   МақолаThin-Film Transistor Technologiesphysica status solidi (a)19900 иқтибос

   ABIABI:AkademIndex/openalex/1990.article.000081

4. Influence of 1 MeV electron irradiation on the output parameters of silicon heterojunction solar cells

   Sharifa B. Utamuradova, E. I. Terukov, O. K. Ataboev +3

   МақолаSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.001554