Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering

1. Role of Anion Variation in Physical Properties of Novel Vacancy Ordered Ga2PtX6 (X = Br and I) for Solar Cell and Thermoelectric Applications

   Abrar Nazir, Ejaz Ahmad Khera, Mumtaz Manzoor +5

   МақолаChalcogenide Semiconductor Thin FilmsJournal of Inorganic and Organometallic Polymers and Materials20256 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.000514

2. Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

   R.O. Ocaya, Abdullah G. Al‐Sehemi, A. Tataroğlu +5

   МақолаSemiconductor materials and interfacesPhysica B Condensed Matter20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.002245