Ушбу ишга иқтибос қилган ишлар

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Иш: Low-temperature diffusion of lithium in silicon-germanium solid solutions

1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000429