Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Effect of the presence of a sufficiently high phosphorus concentration on the concentration distribution of gallium in silicon

1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000429

2. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002944