Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method

1. Obtaining higher manganese silicide films with high thermoelectric properties

   I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.253378

2. Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

   Bakhrom Igаmоv, Aleksey Kamardin, I. R. Bekpulatov +3

   Мақолаnanoparticles nucleation surface interactions20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.009014

3. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010336