Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   МақолаSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.000971

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

   МақолаSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.235254

3. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   МақолаSilicon and Solar Cell TechnologiesJournal of Ovonic Research20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010786