Ушбу ишга иқтибос қилган ишлар

6 та иш

Иш: Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

1. Optimization of electric networks modes under conditions of partial uncertainty of initial information

   Kamal Reymov, S. K. Makhmuthonov, Gulnaz Turmanova +1

   МақолаEngineering and Agricultural InnovationsE3S Web of Conferences20214 иқтибос

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2. Influence of γ – radiation on the properties of silicon with clusters impurity atoms of manganese and nickel

   Z.M. Saparniyazova, Temur Ismaylov, Gulnaza Abdireymova +2

   МақолаEngineering and Agricultural InnovationsE3S Web of Conferences20212 иқтибос

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3. Positron annihilation on defects in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

   МақолаMuon and positron interactions and applicationsJournal of Physics Condensed Matter20121 иқтибос

   ABIABI:AkademIndex/openalex/2012.article.000064

4. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

   МақолаMuon and positron interactions and applicationsJournal of Physics Conference Series20151 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.572512

5. Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

   Sh. Makhkamov, S. N. Abdurakhmanova

   МақолаSilicon and Solar Cell TechnologiesMRS Proceedings19950 иқтибос

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6. Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

   N. A. Matchanov

   МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20070 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000331