Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

   М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

   МақолаSemiconductor materials and interfacesApplied Solar Energy201513 иқтибос

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2. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.232444

3. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452998