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Иш: Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

   А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5

   МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics20219 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.000597

2. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

   А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

   МақолаSemiconductor materials and interfacesApplied Solar Energy20166 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.222668

3. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

   А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

   МақолаSemiconductor materials and interfacesComputational nanotechnology20194 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.467170