Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

1. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

   Chih‐Tang Sah, Robert N. Noyce, W. Shockley

   Мақола195714 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382034

2. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

   E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

   Мақола20033 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382031

3. Influence of proton irradiation on recombination current in 6H–SiC pn structures

   Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina +2

   Мақола19993 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382032

4. Ideal 4H-SiC pn junction and its characteristic shunt

   Anatoly M. Strel’chuk, N.S. Savkina

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.382033