Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Characterization of Cu and Ni Precipitates in n– and p-type Czochralski-grown Silicon by Photoluminescence

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279528

2. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   МақолаSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.585531