Ушбу иш иқтибос қилган ишлар

5 та иш

Иш: The effect of a heated electron on the VAX of a tunnel diode

1. On the tensosensitivity of a p-n junction under illumination

   G. Gulyamov, A. G. Gulyamov

   МақолаOptical Polarization and EllipsometrySemiconductors201510 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.410276

2. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

   Tyler A. Growden, Weidong Zhang, E. R. Brown +5

   Мақола20183 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.410277

3. 151  kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

   Niu Jin, Sung-Yong Chung, Anthony T. Rice +4

   Мақола20032 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.410268

4. Сарлавҳасиз

   Бошқа2 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.410274

5. 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

   Tyler A. Growden, Evan M. Cornuelle, David F. Storm +7

   Мақола20192 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.410279