Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study

1. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.290705

2. Defective Structure of Silicon Doped with Dysprosium

   Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev +3

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20243 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.412289

3. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432368