Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

1. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−<i>x</i>(ZnSe)_<i>x</i> with Nanocrystals

   А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

   МақолаQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.373302

2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

   МақолаSemiconductor materials and interfacesApplied Solar Energy20192 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000285