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3 та иш

Иш: Tuning of bandgaps and emission properties of light-emitting diode materials through homogeneous alloying in molecular crystals

  1. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 иқтибос
    ABI

  2. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    МақолаSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 иқтибос
    ABI

  3. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

    МақолаPhase-change materials and chalcogenides20240 иқтибос
    ABI