Influence of preliminary ion bombardment on the formation of Co and CoSi-=SUB=-2-=/SUB=- nanofilms on Si surface during solid-phase deposition
Turapov I. Kh.Tashkent State Technical University, Tashkent, UzbekistanI. R. BekpulatovTashkent State Technical University, Tashkent, UzbekistanA. Q. TashatovKarshi State University, Karshi, UzbekistanUmirzakov B.E.Tashkent State Technical University, Tashkent, Uzbekistan
ABI
Аннотация
In this work, to obtain ordered nanophases of Co and CoSi 2 , nuclei are preliminarily created on the Si surface by bombardment with Ar + ions with E 0 =0.5 keV and D=8· 10 13 cm -2 . It was found that a narrow band gap (E g ~ 0.3 eV) appears in the band structure at the Co layer thickness of less than 3 ML. The metallic properties of the Co film manifest themselves at a thickness of more than 4-5 ML. Heating the Co/Si(111) system at T=900 K leads to the formation of nanophases and CoSi 2 nanofilms. The E g value is 0.8 eV for the CoSi 2 nanophases with theta~ 3 ML and 0.6 eV for the CoSi 2 film. Keywords: nanophase, epitaxy, low-energy bombardment, surface, single crystal, island growth, ion dose, degree of coverage.
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба
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