Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

1. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

   Sharifa B. Utamuradova

   МақолаAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001560

2. Structural Features of Silicon with Tin Impurity

   Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003699