IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms
М. К. БахадырхановTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanС. Б. ИсамовTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 100095, Uzbekistan
ABI
Аннотация
It is demonstrated that infrared photodetectors based on silicon with multicharged nanoclusters of manganese atoms can be designed that operate in the wavelength range of λ = 1.55–8 μm. Photodetectors fabricated on such materials have the following parameters: a spectral sensitivity range of λ = 1.55–8 μm, an operating temperature range of T = 77–250 K, an optimal electric field of E = 5 V/cm, an optimal size of V = 3 × 2 × 1 mm3, a sensitivity threshold of S = 10−9 W/cm2, and a response time of τ < 10−6 s.
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