Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation
N.S. SavkinaIOFFE Institute, Polyteckhnicheskaya 26, 194021 St. Petersburg, RussiaA. S. TregubovaIOFFE Institute, Polyteckhnicheskaya 26, 194021 St. Petersburg, RussiaM. P. ScheglovIOFFE Institute, Polyteckhnicheskaya 26, 194021 St. Petersburg, RussiaВ. А. СоловьевIOFFE Institute, Polyteckhnicheskaya 26, 194021 St. Petersburg, RussiaAnna VolkovaIOFFE Institute, Polyteckhnicheskaya 26, 194021 St. Petersburg, RussiaA. А. LebedevIOFFE Institute, Polyteckhnicheskaya 26, 194021 St. Petersburg, Russia
2002en
ABI
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Аннотация мавжуд эмас.
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