Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

1. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.381992

2. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

   N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000136