Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates
A. А. LebedevA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaAnatoly M. Strel’chukA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaDenis DavydovA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaN.S. SavkinaA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaA. S. TregubovaA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaAlexey N. Kuznetsov∥A.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaВ. А. СоловьевA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, RussiaН. К. ПолетаевA.F. Ioffe Physico-Tekhnical Inst., Polytekhnicheskaja 26, 194021 St. Petersburg, Russia
2001en
ABI
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