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Иш: Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

1. Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

   S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov

   МақолаAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics20252 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.001643