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Иш: Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

1. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

   МақолаAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002170