Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

1. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

   Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

   МақолаIon-surface interactions and analysisEurasian journal of physics and functional materials20232 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.267071

2. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

   Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

   МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.558588

3. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   МақолаIon-surface interactions and analysisCoatings20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002442