Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

1. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002944

2. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   МақолаIon-surface interactions and analysisCoatings20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002442