Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: MOSFET scaling: Impact of two-dimensional channel materials

1. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   Мақола2D Materials and ApplicationsApplied Sciences20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.439504

2. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

   A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

   Мақола2D Materials and Applications20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.001865

3. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

   Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignPreprints.org20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.preprint.000052

4. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.preprint.001199