Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Optical Properties of <i>n</i>-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs

1. About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

   Ada Leyderman, А. С. Саидов, Muslim Khashaev +1

   МақолаAdvanced Semiconductor Detectors and MaterialsJournal of Materials Science Research20134 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.499300

2. Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

   A. Yu. Leĭderman, M. M. Khashaev

   МақолаOptical and Acousto-Optic TechnologiesApplied Solar Energy20131 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.262321