Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells

1. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   МақолаSemiconductor materials and interfacesApplied Solar Energy20174 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.392482

2. On the Method of Calculation of the Photocurrent in Structures with Periodically Positioned Nanoinclusions

   R. A. Ayukhanov

   МақолаSemiconductor Quantum Structures and DevicesApplied Solar Energy20180 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000964