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Иш: Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

1. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

   А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

   МақолаSemiconductor materials and interfacesComputational nanotechnology20194 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.467170