Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

1. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.511885

2. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009018