Ушбу иш иқтибос қилган ишлар

5 та иш

Иш: Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

   Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

   Мақола201111 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.386765

2. Short-channel effects in SOI MOSFETs

   S. Veeraraghavan, J.G. Fossum

   Мақола19897 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390677

3. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   МақолаAdvancements in Semiconductor Devices and Circuit Design20144 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.386764

4. Performance estimation of junctionless multigate transistors

   Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian +4

   Мақола20093 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.428824

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.572479