Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Background Story of the Invention of Efficient InGaN Blue‐Light‐Emitting Diodes (Nobel Lecture)

1. Self-Nucleated Nonpolar GaN Nanowires with Strong and Enhanced UV Luminescence

   Baodan Liu, Qingyun Liu, Wenjin Yang +4

   МақолаGaN-based semiconductor devices and materialsCrystal Growth & Design20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.001189

2. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

   МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.009139