Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

   S. B. Donaev, Б. Е. Умирзаков

   МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.415746