Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

   S. B. Donaev, Б. Е. Умирзаков

   МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.415746