Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Tunneling via surface dislocation in W/β-Ga₂O₃ Schottky barrier diodes

1. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

   Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.002686

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010089