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Иш: On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

1. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19884 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.244481