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Ушбу иш иқтибос қилган ишлар

11 та иш

Иш: On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

  1. Statistics of the Recombinations of Holes and Electrons

    W. Shockley, W. T. Read

    Мақола195219 иқтибос
    ABI

  2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

    Chih‐Tang Sah, Robert N. Noyce, W. Shockley

    Мақола195714 иқтибос
    ABI

  3. The Theory of<i>p-n</i>Junctions in Semiconductors and<i>p-n</i>Junction Transistors

    W. Shockley

    Мақола19493 иқтибос
    ABI

  4. Качественные методы в квантовой теории

    A. B. Migdal

    Мақола19752 иқтибос
    ABI

  5. Advanced mathematical methods for scientists and engineers

    Carl M. Bender, Steven A. Orszag

    Китоб19782 иқтибос
    ABI

  6. Recent developments in amorphous silicon p-n junction devices

    R.A.G. Gibson, W. E. Spear, P. G. Le Comber +1

    Мақола19802 иқтибос
    ABI

  7. Phonon-assisted carrier transport across a grain boundary

    Chung-Sheng Wu, E.S. Yang

    Мақола19822 иқтибос
    ABI

  8. RF Sputtered gold-amorphous silicon Schottky-barrier diodes

    Le Xu, D.K. Reinhard, Mark G. Thompson

    Мақола19822 иқтибос
    ABI

  9. Doped amorphous semiconductors

    P. G. LeComber, W. E. Spear

    Боб19792 иқтибос
    ABI

  10. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

    S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19841 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI